A 120 GHz I/Q Transmitter Front-end in a 40 nm CMOS for Wireless Chip to Chip Communication

被引:0
作者
Lee, Chae Jun [1 ]
Kim, Seung Hun [1 ]
Son, Hyuk Su
Kang, Dong Min
Kim, Joon Hyung
Byeon, Chulwoo
Park, Chul
机构
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn, 291 Daehak Ro, Daejeon 34141, South Korea
来源
PROCEEDINGS OF THE 2018 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2018年
关键词
120; GHz; chip-to-chip; D-band; low-power; power amplifier; QILO; sub-THz; transmitter; up-conversion mixer; wideband; wireless communication; TRANSCEIVER; POWER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a 120 GHz low-power wideband I/Q transmitter in a 40 nm CMOS technology for wireless chip to chip communication. The proposed transmitter consists of an up-conversion mixer, a Quadrature Injection-Locked Oscillator (QILO), gain amplifiers, and a power amplifier. The cross-coupled-capacitor topology was used to improve the conversion gain of the up-conversion mixer. By adopting a linearizer, the power amplifier achieved an output P1dB of 11 dBm. The transmitter exhibited a conversion gain of 13.5 dB, a 3 dB bandwidth of 14 GHz, and an output P1 dB of 4.5 dBm. The maximum gain mismatch between the I and Q channels in the signal bandwidth are within 2 dB. The transmitter consumed only 271 mW and its chip size is 1.51 mm(2).
引用
收藏
页码:192 / 195
页数:4
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