Valley-Coherent Hot Carriers and Thermal Relaxation in Monolayer Transition Metal Dichalcogenides

被引:9
作者
Kallatt, Sangeeth [1 ,2 ,3 ]
Umesh, Govindarao [3 ]
Majumdar, Kausik [1 ]
机构
[1] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr NanoSci & Engn, Bangalore 560012, Karnataka, India
[3] Natl Inst Technol Karnataka, Dept Phys, Mangalore 575025, India
关键词
PHOTOLUMINESCENCE; EXCITONS; ENERGY; DIODES; STATES; MOS2;
D O I
10.1021/acs.jpclett.6b00759
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We show room-temperature valley coherence in MoS2, MoSe2, WS2, and WSe2 monolayers using linear polarization-resolved hot photoluminescence (PL) at energies close to the excitation, demonstrating preservation of valley coherence before sufficient scattering events. The features of the copolarized hot luminescence allow us to extract the lower bound of the binding energy of the A exciton in monolayer MoS2 as 0.42 (+/- 0.02) eV. The broadening of the PL peak is found to be dominated by a Boltzmann-type hot luminescence tail, and using the slope of the exponential decay, the carrier temperature is extracted in situ at different stages of energy relaxation. The temperature of the emitted optical phonons during the relaxation process is probed by exploiting the corresponding broadening of the Raman peaks due to temperature induced anharmonic effects. The findings provide a physical picture of photogeneration of valley-coherent hot carriers and their subsequent energy relaxation pathways.
引用
收藏
页码:2032 / 2038
页数:7
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