Unconventional planar Hall effect in exchange-coupled topological insulator-ferromagnetic insulator heterostructures

被引：33
作者：
Rakhmilevich, David [1 ,2 ]
Wang, Fei [3 ]
Zhao, Weiwei [3 ]
Chan, Moses H. W. [3 ]
Moodera, Jagadeesh S. [1 ,4 ]
Liu, Chaoxing [3 ]
Chang, Cui-Zu [1 ,3 ]
机构：
[1] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
[2] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02139 USA
[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[4] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
PHYSICAL REVIEW B | 2018年 / 98卷 / 09期
关键词：
SPIN-ORBIT TORQUE; SURFACE-STATES; FILMS; CURRENTS; BI2SE3;
D O I：
10.1103/PhysRevB.98.094404
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magnetotransport phenomena. Here we report the experimental observation of an unconventional planar Hall effect (PHE) and a gate-tunable hysteretic planar magnetoresistance in EuS/TI heterostructures, in which EuS is a ferromagnetic insulator (FMI) with an in-plane magnetization. In such exchange-coupled FMI/TI heterostructures, we find a significant (suppressed) PHE when the in-plane magnetic field is parallel (perpendicular) to the electric current. This behavior differs from previous observations of the PHE in ferromagnets and semiconductors. Furthermore, as the thickness of the 3D TI films is reduced into the 2D limit, in which the Dirac SSs develop a hybridization gap, we find a suppression of the PHE around the charge-neutral point indicating the vital role of Dirac SSs in this phenomenon. To explain our findings, we outline a symmetry argument that excludes linear Hall mechanisms and suggest two possible nonlinear Hall mechanisms that can account for all the essential qualitative features in our observations.
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页数：8
相关论文
共 60 条
[1]   Injection currents in narrow-gap (Pb1-xSnxTe):In insulators [J].
Akimov, AN ;
Erkov, VG ;
Klimov, AE ;
Molodtsova, EL ;
Suprun, SP ;
Shumsky, VN .
SEMICONDUCTORS, 2005, 39 (05) :533-538
[2]   Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films [J].
Bason, Y ;
Klein, L ;
Yau, JB ;
Hong, X ;
Ahn, CH .
APPLIED PHYSICS LETTERS, 2004, 84 (14) :2593-2595
[3]   Giant planar Hall effect in topological metals [J].
Burkov, A. A. .
PHYSICAL REVIEW B, 2017, 96 (04)
[4]   Zero-Field Dissipationless Chiral Edge Transport and the Nature of Dissipation in the Quantum Anomalous Hall State [J].
Chang, Cui-Zu ;
Zhao, Weiwei ;
Kim, Duk Y. ;
Wei, Peng ;
Jain, J. K. ;
Liu, Chaoxing ;
Chan, Moses H. W. ;
Moodera, Jagadeesh S. .
PHYSICAL REVIEW LETTERS, 2015, 115 (05)
[5]  
Chang CZ, 2015, NAT MATER, V14, P473, DOI [10.1038/nmat4204, 10.1038/NMAT4204]
[6]   Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].
Chang, Cui-Zu ;
Zhang, Jinsong ;
Feng, Xiao ;
Shen, Jie ;
Zhang, Zuocheng ;
Guo, Minghua ;
Li, Kang ;
Ou, Yunbo ;
Wei, Pang ;
Wang, Li-Li ;
Ji, Zhong-Qing ;
Feng, Yang ;
Ji, Shuaihua ;
Chen, Xi ;
Jia, Jinfeng ;
Dai, Xi ;
Fang, Zhong ;
Zhang, Shou-Cheng ;
He, Ke ;
Wang, Yayu ;
Lu, Li ;
Ma, Xu-Cun ;
Xue, Qi-Kun .
SCIENCE, 2013, 340 (6129) :167-170
[7]   Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3 [J].
Chen, J. ;
Qin, H. J. ;
Yang, F. ;
Liu, J. ;
Guan, T. ;
Qu, F. M. ;
Zhang, G. H. ;
Shi, J. R. ;
Xie, X. C. ;
Yang, C. L. ;
Wu, K. H. ;
Li, Y. Q. ;
Lu, L. .
PHYSICAL REVIEW LETTERS, 2010, 105 (17)
[8]   Theory of spin Hall magnetoresistance [J].
Chen, Yan-Ting ;
Takahashi, Saburo ;
Nakayama, Hiroyasu ;
Althammer, Matthias ;
Goennenwein, Sebastian T. B. ;
Saitoh, Eiji ;
Bauer, Gerrit E. W. .
PHYSICAL REVIEW B, 2013, 87 (14)
[9]   Fourfold symmetric planar Hall effect in epitaxial La1-xSrxCoO3 thin films [J].
Cui, W. Y. ;
Li, P. ;
Bai, H. L. .
JOURNAL OF APPLIED PHYSICS, 2015, 117 (13)
[10]  
Fan YB, 2016, NAT NANOTECHNOL, V11, P352, DOI [10.1038/nnano.2015.294, 10.1038/NNANO.2015.294]
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