Interfacial effects on magnetic interlayer coupling between perpendicular Co/Ni multilayers across Ru spacer

被引：10

作者：

Chen, Shaohai ^{[1
]}

Xiao, Yili ^{[1
]}

Xie, W. H. ^{[2
,3
]}

Zhang, Zongzhi ^{[1
]}

Ma, B. ^{[1
]}

Jin, Q. Y. ^{[1
,2
,3
]}

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Engn Ctr, Shanghai 200433, Peoples R China

[2] E China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China

[3] E China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 26期

关键词：

ANISOTROPY;

D O I：

10.1063/1.4905244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interlayer exchange coupling properties in synthetic antiferromagnetic (AF) structures based on Co/Ni perpendicular multilayers were investigated by varying the Ru spacer thickness (t(Ru)) and the ferromagnetic (FM) layer material at the FM/Ru interfaces. Samples of two Co layers adjacent to Ru own much stronger AF coupling field (H-AF) and show two H-AF peaks located at t(Ru) = 0.47 and 1.08 nm. If the interfacial Co layers are substituted by Ni, the H-AF at the 1st peak decreases much more considerably, becomes lower than the 2nd one and even disappears due to strong pinhole-induced FM coupling. Such pinhole effect makes H-AF of t(Ru)< 0.85 nm remains unchanged or even decrease with decreasing temperatures. By tuning the interfacial Co layer thickness, pinhole effect has been suppressed as a result of greatly enhanced H-AF, leading to a normal temperature dependence of Ruderman-Kittel-Kasuya-Yosida-type H-AF even at thin t(Ru) cases, i.e., increase in H-AF with temperature decreasing. (C) 2014 AIP Publishing LLC.

引用

页数：5

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