Class-E Power Amplifier with Novel Pre-Distortion Linearization Technique for 4G Mobile Wireless Communications

被引：8
作者：
Eswaran, U. [1 ]
Ramiah, H. [1 ]
Kanesan, J. [1 ]
机构：
[1] Univ Malaya, Dept Elect Engn, Fac Engn, Kuala Lumpur 50603, Malaysia
来源：
ELEKTRONIKA IR ELEKTROTECHNIKA | 2014年 / 20卷 / 04期
关键词：
Linearization; LTE; PAE; power amplifier;
D O I：
10.5755/j01.eee.20.4.3185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method to improve the battery life span of a 4G handset power amplifier (PA) is proposed. This technique is realized by employing a novel passive linearization topology on a class-E PA. Implemented in a 2 mu m InGaP/GaAs Hetero-Junction Bipolar Transistor (HBT) technology, the PA delivers 49 % of power added efficiency (PAE) at output power of 28 dBm while complying with the Long Term Evolution (LTE) regulation at Band 1(1920 MHz-1980 MHz) with corresponding supply voltage headroom of 4 V. The performance enhancement is achieved at LTE channel bandwidth of 20 MHz. To the best of the author's knowledge, this is the first class-E PA which meets adjacent channel leakage ratio (ACLR) specifications at 20 MHz LTE bandwidth.
引用
收藏
页码：53 / 56
页数：4
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