New experimental findings for single-event gate rupture in MOS capacitors and linear devices

被引：25

作者：

Lum, GK ^{[1
]}

Boruta, N

Baker, JM

Robinette, L

Shaneyfelt, MR

Schwank, JR

Dodd, PE

Felix, JA

机构：

[1] Lockheed Martin Space Syst Co, Sunnyvale, CA 94088 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期

关键词：

catastrophic gate oxide failure; dielectric gate rupture; linear devices; single-event gate rupture (SEGR);

D O I：

10.1109/TNS.2004.840262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.

引用

收藏

页码：3263 / 3269

页数：7

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