An integrated patch-clamp amplifier in silicon-on-sapphire CMOS

We fabricated an integrated patch-clamp amplifier capable of recording from pico- to tens of micro-amperes of current. The high-dynamic range of seven decades and the pico-ampere sensitivity of the instrument was designed for whole-cell patch-clamp recordings. The prototype was fabricated on a 0.5/mu m silicon-on-sapphire process. The device employs an integrating headstage with a frequency-modulated output pulse ranging from 3Hz to 10MHz. A digital interface produces a 16bit output conversion of the input currents. We report on electrical measurements from the fabricated device, and measurements conducted on cells in a typical patch-clamp experiment.