Construction of GaN/Ga2O3 p-n junction for an extremely high responsivity self-powered UV photodetector

被引：300

作者：

Li, Peigang ^{[1
]}

Shi, Haoze ^{[1
]}

Chen, Kai ^{[1
]}

Guo, Daoyou ^{[1
]}

Cui, Wei ^{[2
,3
]}

Zhi, Yusong ^{[2
,3
]}

Wang, Shunli ^{[1
]}

Wu, Zhenping ^{[2
,3
]}

Chen, Zhengwei ^{[2
,3
]}

Tang, Weihua ^{[2
,3
]}

机构：

[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Beijing Univ Posts & Telecommun, Lab Optoelect Mat & Devices, Sch Sci, Beijing 100876, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2017年 / 5卷 / 40期

基金：

中国国家自然科学基金;

关键词：

SOLAR-BLIND PHOTODETECTOR; HIGH-DETECTIVITY; THIN-FILM; BETA-GA2O3; ULTRAVIOLET; GROWTH; FABRICATION; HETEROJUNCTION; DETECTORS; NANOWIRES;

D O I：

10.1039/c7tc03746e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p-n junction by depositing n-type Ga2O3 thin film on Al2O3 single crystals substrate covered by p-type GaN thin film. The fabricated device exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination. The device shows an extremely high responsivity of 54.43 mA W-1, a fast decay time of 0.08 s, a high I-light/I-dark ratio of 152 and a high detectivity of 1.23 x 10(11) cm Hz(1/2) W-1 under 365 nm light with a light intensity of 1.7 mW cm(-2) under zero bias. Such excellent performances under zero bias are attributed to the rapid separation of photogenerated electron-hole pairs driven by built-in electric field in the interface depletion region of GaN/Ga2O3 p-n junction. The results strongly suggest that the GaN/Ga2O3 p-n junction based photodetectors are suitable for applications in secure ultraviolet communication and space detection which require high responsivity and self-sufficient functionality.

引用

页码：10562 / 10570

页数：9

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