Interface Trap Density Estimation in FinFETs Using the gm/ID Method in the Subthreshold Regime

被引：3

作者：

Boksteen, Boni K. ^{[1
,2
]}

Schmitz, Jurriaan ^{[1
]}

Hueting, Raymond J. E. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands

[2] ABB Semicond, CH-5600 Lenzburg, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 05期

关键词：

Complementary MOSFETs (CMOSFETs); current; FinFETs; MOS devices; traps; FIELD-EFFECT TRANSISTORS; THIN-FILM; MODEL; EXTRACTION; SLOPE; NOISE;

D O I：

10.1109/TED.2016.2539382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we show that the subthreshold current-voltage characteristic can be used for estimating the interface trap density as a function of the energy in fully depleted symmetric metal-oxide-semiconductor devices with a minimum amount of modeling. The method is analyzed using TCAD simulations, and illustrated with the measurements on n-type silicon-on-insulator FinFETs. The results indicate that the trap density can be extracted between similar to 0.65 and 0.90 eV. This range is limited by resolution issues at the lowest current levels, and by the transition from subthreshold to saturation behavior at the high current levels.

引用

页码：1814 / 1820

页数：7

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