Mechanism of off-leakage current in InGaZnO thin-film transistors

被引：0
作者：
Wakimura, Go [1 ]
Yamauchi, Yoshimitsu [1 ]
Matuoka, Toshimasa [1 ]
Kamakura, Yoshinari [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
来源：
2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of I-d-V-g characteristics in off-state region, depending on the amount and depth of the deep states.
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