Mechanism of off-leakage current in InGaZnO thin-film transistors

被引：0

作者：

Wakimura, Go ^{[1
]}

Yamauchi, Yoshimitsu ^{[1
]}

Matuoka, Toshimasa ^{[1
]}

Kamakura, Yoshinari ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of I-d-V-g characteristics in off-state region, depending on the amount and depth of the deep states.

引用

页数：2

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