Simulation and measurement of the self-heating in GaNHFETs

被引：0
作者：
McAlister, S. P. [1 ]
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R9, Canada
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5 | 2007年 / 4卷 / 05期
关键词：
D O I：
10.1002/pssc.200674252
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-heating in a GaN HFET has been simulated and used to deduce different average or effective temperatures, which are representative of the device performance. This suggests how simple electrical measurements, coupled with simulation may help reveal the maximum temperatures in a device. Some experimental data is shown indicating how electrical measurements by themselves can be used to do this. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1653 / 1657
页数：5
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