Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures

被引：1

作者：

Rimkus, Andrius ^{[1
]}

Pozingyte, Evelina ^{[1
]}

Nedzinskas, Ramunas ^{[1
]}

Cechavicius, Bronislovas ^{[1
]}

Kavaliauskas, Julius ^{[1
]}

Valusis, Gintaras ^{[1
]}

Li, Lianhe ^{[2
]}

Linfield, Edmund H. ^{[2
]}

机构：

[1] Inst Semicond Phys, Ctr Phys Sci & Technol, A Gostauto 11, LT-01108 Vilnius, Lithuania

[2] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 03期

关键词：

InAs quantum dots; Modulated reflectance; Photoluminescence; Optical transitions; Electronic structure; PHOTOREFLECTANCE; SPECTROSCOPY; WELLS;

D O I：

10.1007/s11082-016-0446-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are investigated. Modulated reflectance and photoluminescence spectroscopy is used to probe the QD- and QW-related interband optical transitions over the temperature range of 3-300 K. The observed spectral features in QDs are identified using numerical calculations in a framework of 8-band k . p method. It is found that covering the dots by a 5 nm-thick InGaAs layer yields the energy red-shift of ground-state transition by similar to 150 meV. Moreover, the analysis of interband transition energy dependence on temperature using Varshni expression shows that material composition of InAs QDs significantly changes due to Ga/In interdiffusion. A comparison of emission-and absorption-type spectroscopy applied for InAs-GaAs QDs indicates a Stokes shift of similar to 0.02 meV above 150 K temperature.

引用

页码：1 / 6

页数：6

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