The effects of nonlocal impact ionization on the speed of avalanche photodiodes

被引：11

作者：

Hambleton, PJ ^{[1
]}

Ng, BK ^{[1
]}

Plimmer, SA ^{[1
]}

David, JPR ^{[1
]}

Rees, GJ ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche photodiode (APD); bandwidth; dead space; frequency response; In0.52Al0.48As; nonequilibrium; nonlocal; velocity enhancement;

D O I：

10.1109/TED.2002.808523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from,further small reductions in the lengths of short multiplication regions.

引用

页码：347 / 351

页数：5

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