Synthesis of ZnSnN2 crystals via a high-pressure metathesis reaction

被引：60

作者：

Kawamura, F. ^{[1
]}

Yamada, N. ^{[2
]}

Imai, M. ^{[3
]}

Taniguchi, T. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan

[2] Chubu Univ, Dept Appl Chem, 1200 Matsumoto, Kasugai, Aichi 4878501, Japan

[3] Natl Inst Mat Sci, Sengen 1-2-1, Tsukuba, Ibaraki 3050047, Japan

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2016年 / 51卷 / 03期

关键词：

ZNGEN2; EPITAXY; GROWTH; ZN;

D O I：

10.1002/crat.201500258

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The synthesis of crystals of a zinc-and tin-based earth-abundant element nitride (ZnSnN2) semiconductor was successfully achieved via a metathesis reaction under high pressure. Pressures exceeding 5.5 GPa were required to obtain single-phase crystals. The material's bandgap was determined to be 1.4 eV, which is ideal for photovoltaic absorbers and visible light-active photocatalysts. The decomposition temperature of the material was estimated to be approximately 350-400 degrees C at atmospheric pressure. Finally, the chemical stability of the material against alkali and acid solutions was sufficient for photovoltaic and photocatalytic applications.

引用

页码：220 / 224

页数：5

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