Influence of substrate temperature and O2 row on the properties of RF-Magnetron-Sputtered indium-tin-oxide thin films

被引:18
作者
Kim, T. S. [1 ]
Choi, C. H.
Jeong, T. S.
Shim, K. H.
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Chonbuk Natl Univ, Dept Semicond Sci & TEchnol, Jeonju 561756, South Korea
关键词
indium tin oxide; thin film; sputtering; transparent;
D O I
10.3938/jkps.51.534
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Indium tin oxide (ITO) thin films have been deposited onto glass substrates by using RF magnetron sputtering at different substrate temperatures and at various oxygen (O-2) flow rates. X-ray diffraction (XRD), atomic force microscopy (AFM.), UV-Vis spectroscopy and four-point probe techniques were used to investigate the structural, the surface morphological, the optical, and the electrical properties of the prepared films respectively. An increase in grain size and a decrease in surface roughness were observed for ITO films with increasing in O-2 flow rate and substrate temperature. The absorption band edge was found to shift towards the short- wavelength region with increasing of O-2 flow rate and with decrease of substrate temperature. The surface resistance was found to decrease with the increasing substrate temperature at a constant O-2 flow rate and to increase with increasing O-2 flow rate in the temperature range studied.
引用
收藏
页码:534 / 538
页数:5
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