Third-order intermodulation measurements of microstrip bandpass filters based on high-temperature superconductors

被引：10

作者：

Sato, H ^{[1
]}

Kurian, J ^{[1
]}

Naito, M ^{[1
]}

机构：

[1] NTT Corp, Basic Res Labs, Nippon Telegraph & Telephone Corp, Kanagawa 2430198, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2004年 / 52卷 / 12期

关键词：

bandpass filters; high-temperature superconductors (HTSs); intermodulation distortion; microstrip; thin films;

D O I：

10.1109/TMTT.2004.837312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The insufficient power-handling capability of high-temperature superconducting microwave filters has been a serious barrier to their application. To clarify the key parameters for improving the power-handling capability of RF filters based on high-temperature superconductors (HTSs) with microstrip structures, we synthesized bandpass filters with different layouts using several kinds of HTS thin films and performed third-order intermodulation measurements on them. The experimental results indicate that increasing the film thickness and utilizing molecular-beam-epitaxy-grown films of NdBa2Cu3O7 (NBCO) are effective in obtaining microstrip filters with high power-handling capability. For NBCO filters, we also investigated the effects of oxygen annealing, passband width, and the frequencies of the input signals on the power-handling capability.

引用

页码：2658 / 2663

页数：6

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