Growth of Al-doped ZnO nanorod arrays on the substrate at low temperature

被引：19

作者：

Eskandari, M. ^{[2
]}

Ahmadi, V. ^{[1
]}

Ahmadi, S. H. ^{[3
]}

机构：

[1] Tarbiat Modares Univ, Dept Elect Engn, Tehran, Iran

[2] Tarbiat Modares Univ, Dept Nanomat Engn, Tehran, Iran

[3] Laser Res Ctr, Tehran, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 05期

关键词：

Nanorod; Array; ZnO; Low temperature; Al-doped; CHEMICAL METHOD; THIN-FILMS; DEPOSITION; ROUTE; NANOWIRES;

D O I：

10.1016/j.physe.2010.01.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum-doped zinc oxide nanorod arrays are deposited on glass by a solution method at low temperature (80 degrees C). The as-grown samples are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-vis spectroscopy and Raman spectroscopy. We observe that Raman spectroscopy of aluminum-doped zinc oxide nanorods is different from undoped zinc oxide nanorods. The intensity of Raman peak at 437 cm(-1) decreases for aluminum-doped zinc oxide nanorods sample while a peak at 750 cm(-1) appears. X-ray diffraction (XRD) shows aluminum-doped zinc oxide nanorods grown in (0 0 2) orientation. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1683 / 1686

页数：4

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