InP Schottky junctions for zero bias detector diodes

被引：50
作者：
Horváth, ZJ
Rakovics, V
Szentpáli, B
Püspöki, S
Zd'ánsky, K
机构：
[1] Hungarian Acad Sci & Mat Sci, Tech Phys Res Inst, MFA, H-1525 Budapest 114, Hungary
[2] Acad Sci Czech Republic, Inst Radio Engn & Elect, Prague 18251 8, Czech Republic
来源：
VACUUM | 2003年 / 71卷 / 1-2期
关键词：
InP; Schottky junction; current mechanisms; temperature dependence;
D O I：
10.1016/S0042-207X(02)00723-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cr + Au and Ag Schottky diodes were prepared on n-type InP by using HF or Na2S + HF surface treatment for zero bias microwave detector purposes. The diodes were studied by current-voltage and capacitance-voltage measurements in the temperature range of 80-320 K. The obtained I-V barrier heights were in the range of 0.38-0.49 eV with ideality factors of 1.08-1.24. The peculiarities of the current-voltage characteristics are interpreted in terms of the thermionic emission, the thermionic-field emission, and the field emission current mechanisms. (C) 2003 Elsevier Science Ltd. All rights reserved.
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收藏
页码：113 / 116
页数：4
相关论文
共 12 条
[1]   Fermi level pinning and Schottky barrier height control at metal-semiconductor interfaces of InP and related materials [J].
Hasegawa, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (2B) :1098-1102
[2]   Modification of Al/Si interface and Schottky barrier height with chemical treatment [J].
Horváth, ZJ ;
Adám, M ;
Szabó, I ;
Serényi, M ;
Van Tuyen, V .
APPLIED SURFACE SCIENCE, 2002, 190 (1-4) :441-444
[3]   Analysis of I-V measurements on CrSi2-Si Schottky structures in a wide temperature range - Comment [J].
Horvath, ZJ .
SOLID-STATE ELECTRONICS, 1996, 39 (01) :176-178
[4]  
Horvath ZJ, 1998, P SOC PHOTO-OPT INS, V3316, P1085
[5]  
HORVATH ZJ, 1992, MATER RES SOC SYMP P, V260, P359, DOI 10.1557/PROC-260-359
[6]   Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation [J].
Horvath, ZJ ;
Adam, M ;
Ducso, C ;
Pinter, I ;
Van Tuyen, V ;
Barsony, I ;
Gombia, E ;
Mosca, R ;
Makaro, Z .
SOLID-STATE ELECTRONICS, 1998, 42 (02) :221-228
[7]  
HORVATH ZJ, 2000, P 3 INT EUR C ADV SE, P39
[8]  
HORVATH ZJ, 1996, P 24 INT C MICR MIEL, P365
[9]   Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments [J].
Jeng, MJ ;
Wang, HT ;
Chang, LB ;
Cheng, YC ;
Chou, ST .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6261-6263
[10]   SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J].
KENDELEWICZ, T ;
NEWMAN, N ;
LIST, RS ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1206-1211
12