Synthesis and optical absorption properties of TiO2 nanostructures in SiO2 by sequential implantation of Cu and Ti ions
被引:4
作者:
Jing, Yaqi
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h-index: 0
机构:
Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R ChinaTianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
Jing, Yaqi
[1
]
Mu, Xiaoyu
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h-index: 0
机构:
Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R ChinaTianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
Mu, Xiaoyu
[1
]
Liu, Xiaoyu
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h-index: 0
机构:
Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R ChinaTianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
Liu, Xiaoyu
[1
]
Liu, Changlong
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机构:
Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Inst Adv Mat Phys, Tianjin 300072, Peoples R China
Beijing Normal Univ, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R ChinaTianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
Liu, Changlong
[1
,2
,3
]
机构:
[1] Tianjin Univ, Sch Sci, Tianjin 300072, Peoples R China
[2] Fac Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Inst Adv Mat Phys, Tianjin 300072, Peoples R China
[3] Beijing Normal Univ, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
Cu and Ti ion implantation;
TiO2;
nanostructures;
Optical absorption property;
Band gap energy;
S-DOPED TIO2;
VISIBLE-LIGHT;
SILICATE-GLASSES;
THIN-FILMS;
NANOPARTICLES;
NANOCLUSTERS;
DEPENDENCE;
NANOCRYSTALLINE;
PHOTOCATALYST;
TEMPERATURE;
D O I:
10.1016/j.nimb.2017.03.098
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
Optical-grade silica samples were singly or sequentially implanted with 100 keV Cu and 40 keV Ti ions at the same fluence of 1 x 10(17) ions/cm(2), and were then subjected to furnace annealing in nitrogen ambient. Structure, spatial distribution as well as optical absorption properties of the synthesized nanostructures have been investigated in detail by using various techniques. Our results clearly show that high fluence Ti ion implantation together with subsequent annealing at high temperature could lead to formation of TiO2 nanoparticles with both rutile and anatase phases in SiO2 substrate, which causes an absorption band edge at about 365 nm. The pre-implantation of Cu ion could not only largely enhance growth of the TiO2 nanoparticles during annealing, but also significantly reduce the corresponding band gap energy. Moreover, results from cross sectional transmission electron microscopy measurements demonstrate that the pre-implanted Cu atoms participates into the thermal growth of the TiO2 nanoparticles, which may be responsible for the large redshift of the absorption behavior obtained in the Cu and Ti sequentially implanted SiO2. (C) 2017 Elsevier B.V. All rights reserved.