A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies

被引：12

作者：

Naik, Tejas R. ^{[1
]}

Singh, Vibhas ^{[2
]}

Ravikanth, M. ^{[3
]}

Rao, V. Ramgopal ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nanoelect, Bombay 400076, Maharashtra, India

[2] Appl Mat Inc, Santa Clara, CA 95054 USA

[3] Indian Inst Technol, Dept Chem, Bombay 400076, Maharashtra, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 05期

关键词：

Barrier layers; copper diffusion; copper interconnects; low-k interlayer dielectric (ILD); porphyrin; self-assembled monolayer (SAM); self-assembly; LOW-K DIELECTRICS; ELECTRICAL RELIABILITY ISSUES; CU DIFFUSION; FILMS; INTERCONNECTS; PERFORMANCE; TA;

D O I：

10.1109/TED.2016.2537370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties as a copper diffusion barrier. The ZnTPPOH VPSAMs show a 1.5x improvement over the earlier investigated 3-aminopropyltrimethoxysilane self-assembled monolayers (SAMs) in bias temperature stress (BTS) studies. We show that with the porphyrin SAMs, one can achieve an improvement in breakdown field of a low-K dielectric by two times and a drop in copper diffusion by six times as measured by secondary ion mass spectroscopy.

引用

页码：2009 / 2015

页数：7

共 39 条

[1] Interlevel dielectric failures in copper/low-k structures [J].

Alers, GB ;

Jow, K ;

Shaviv, R ;

Kooi, G ;

Ray, GW .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2004, 4 (02) :148-152

[2]

Aronov D., 2007, J APPL PHYS, V101

[3] Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia [J].

Becker, JS ;

Gordon, RG .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2239-2241

[4] Evaluation of Ta and TaN-based Cu diffusion barriers deposited by Advanced Hi-Fill (AHF) sputtering onto blanket wafers and high aspect ratio structures [J].

Burgess, SR ;

Donohue, H ;

Buchanan, K ;

Rimmer, N ;

Rich, P .

MICROELECTRONIC ENGINEERING, 2002, 64 (1-4) :307-313

[5] Screening self-assembled monolayers as Cu diffusion barriers [J].

Caro, A. Maestre ;

Maes, G. ;

Borghs, G. ;

Whelan, C. M. .

MICROELECTRONIC ENGINEERING, 2008, 85 (10) :2047-2050

[6] Bottom-Up Engineering of Subnanometer Copper Diffusion Barriers Using NH2-Derived Self-Assembled Monolayers [J].

Caro, Arantxa Maestre ;

Armini, Silvia ;

Richard, Olivier ;

Maes, Guido ;

Borghs, Gustaaf ;

Whelan, Caroline M. ;

Travaly, Youssef .

ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (07) :1125-1131

[7] Reliability Evaluation for Copper/Low-k Structures Based on Experimental and Numerical Methods [J].

Che, Fa Xing ;

Zhang, Xiaowu ;

Zhu, Wen Hui ;

Chai, Tai Chong .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) :455-463

[8] Study of a self-assembled porphyrin monomolecular layer obtained by metal complexation [J].

Da Cruz, F ;

Driaf, K ;

Berthier, C ;

Lameille, JM ;

Armand, F .

THIN SOLID FILMS, 1999, 349 (1-2) :155-161

[9] Molecular-nanolayer-induced suppression of in-plane Cu transport at Cu-silica interfaces [J].

Gandhi, D. D. ;

Ganesan, P. G. ;

Chandrasekar, V. ;

Gan, Z. ;

Mhaisalkar, S. G. ;

Li, H. ;

Ramanath, G. .

APPLIED PHYSICS LETTERS, 2007, 90 (16)

[10] Annealing-induced interfacial toughening using a molecular nanolayer [J].

Gandhi, Darshan D. ;

Lane, Michael ;

Zhou, Yu ;

Singh, Amit P. ;

Nayak, Saroj ;

Tisch, Ulrike ;

Eizenberg, Moshe ;

Ramanath, Ganapathiraman .

NATURE, 2007, 447 (7142) :299-U2

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