Spin-polarized photoreflectance in ferromagnetic GaMnAs

被引：4

作者：

Kim, Ji-Hee ^{[1
]}

Han, Kang-Jeon

Jang, Dong-Wook

Yee, Ki-Ju

Liu, X.

Furdyna, J. K.

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 50卷 / 03期

关键词：

ferromagnetic semiconductor; spin-polarized photoreflectance;

D O I：

10.3938/jkps.50.819

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the spin-polarized photoreflectance in a ferromagnetic GaMnAs layer. The transient photoreflectance results show a circular polarization dependence of the probe beam in quasi-degenerate pump-probe measurements. The circular polarization dependence, which follows the magnetization as we increase the sample temperature, can be understood from the strong spin exchange coupling between conduction or valence band electrons and localized Mn ion spins.

引用

页码：819 / 823

页数：5

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