Solution growth and crystallinity characterization of bulk 6H-SiC

被引：15

作者：

Yashiro, N. ^{[1
]}

Kusunoki, K. ^{[1
]}

Kamei, K. ^{[1
]}

Yauchi, A. ^{[1
]}

机构：

[1] Sumitomo Met Ind Ltd, Corp Res & Dev Labs, Amagasaki, Hyogo 6600891, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

Top seeded solution growth; 6H-SiC; Bulk growth; Crystalline quality; EPD; SIC CRYSTAL;

D O I：

10.4028/www.scientific.net/MSF.645-648.33

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

The stable long time growth with the use of Si-C-Ti ternary solution was realized by improving the thermal condition during the growth. We have succeeded in obtaining a maximum 10 mm thick bulk 6H-SiC crystal, which is the largest bulk crystal ever obtained by the solution growth technique. The obtained crystal was free of cracks and exhibited a homogeneous light green color. The crystallinity of the grown crystal was characterized by X-ray rocking curve measurements using (0006) reflection and by the molten KOH etching. The mapping of the full width at half maximum (FWHM) revealed the average FWHM around 30 arc seconds and the minimal FWHM under 16 arc seconds. The etch pit density (EPD) was typically in the range between 10(4) and 10(5) cm(-2), which was comparable to that of the crystal seed.

引用

页码：33 / 36

页数：4

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