Cs adsorption on β-Ga2O3(100) surface: A first-principles research

被引：0

作者：

Zhao, He ^{[1
]}

Fu, Xiaoqian ^{[1
,2
]}

Ren, Shanshan ^{[1
]}

Gao, Hengjiao ^{[3
]}

机构：

[1] Univ Jinan, Sch Informat Sci & Engn, Jinan, Peoples R China

[2] Univ Jinan, Shandong Prov Key Lab Network Based Intelligent C, Jinan, Peoples R China

[3] Key Lab Vacuum Technol & Phys, Lanzhou Inst Space Technol Phys, Lanzhou, Peoples R China

来源：

SEVENTH SYMPOSIUM ON NOVEL PHOTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS | 2021年 / 11763卷

基金：

中国国家自然科学基金;

关键词：

beta-Ga2O3; first-principles; Cs adsorption; work function;

D O I：

10.1117/12.2586531

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Based on density functional theory (DFT) and first -principles method, the feasibility of using beta-Ga2O3 to make vacuum ultraviolet photocathode was studied. Eight Cs adsorption sites are chosen for the beta-Ga2O3 (100) surface. The adsorption energy, work function, energy band stmcture of 8 adsorption sites and the change of work function under different Cs coverage are calculated. The results show that the adsorption energy at all sites decreases significantly.It can be concluded that the beta-Ga2O3 (100) surface satisfies the necessary conditions for Cs/O activation. In addition, different cesium adsorption concentrations have an effect on the surface work function, and the overall trend is that it decreases at first and then increases. Finally, the properties of energy bands under different coverage are analyzed. The results show that the widely used method of cesium adsorption to reduce the work function is also suitable for beta-Ga2O3 materials.

引用

页数：6

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