A lateral symmetrically bistable buckled beam

被引：66

作者：

Vangbo, M ^{[1
]}

Backlund, Y ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Lab, Dept Mat Sci, S-75121 Uppsala, Sweden

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 1998年 / 8卷 / 01期

关键词：

D O I：

10.1088/0960-1317/8/1/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have micromachined a lateral symmetrically bistable buckled beam for snap-in holding structures by oxidizing released beams micromachined on thick silicon-on-insulator wafers. The wafers were prepared by bonding and chemical mechanical polishing, and the structures were fabricated by deep silicon reactive ion etching using the black silicon method, subsequently released and thermally oxidized. The bistability was monitored in situ in a scanning electron microscope using a micromanipulator. Guidelines for designing beams of an expected performance are given and arguments for considering beams that are not 'fairly slender' have been found.

引用

页码：29 / 32

页数：4

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