Gate control of dynamic nuclear polarization in GaAs quantum wells

被引：20

作者：

Sanada, H ^{[1
]}

Matsuzaka, S ^{[1
]}

Morita, K ^{[1
]}

Hu, CY ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.94.097601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.

引用

页数：4

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