Density functional theory based study of chlorine doped WS2-metal interface

被引:18
作者
Chanana, Anuja [1 ]
Mahapatra, Santanu [1 ]
机构
[1] Indian Inst Sci, Dept Elect Syst Engn, NanoScale Device Res Lab, Bangalore 560012, Karnataka, India
关键词
DICHALCOGENIDES; TRANSISTORS;
D O I
10.1063/1.4943267
中图分类号
O59 [应用物理学];
学科分类号
摘要
Investigation of a transition metal dichalcogenide (TMD)-metal interface is essential for the effective functioning of monolayer TMD based field effect transistors. In this work, we employ the Density Functional Theory calculations to analyze the modulation of the electronic structure of monolayer WS2 with chlorine doping and the relative changes in the contact properties when interfaced with gold and palladium. We initially examine the atomic and electronic structures of pure and doped monolayer WS2 supercell and explore the formation of midgap states with band splitting near the conduction band edge. Further, we analyze the contact nature of the pure supercell with Au and Pd. We find that while Au is physiosorbed and forms n-type contact, Pd is chemisorped and forms p-type contact with a higher valence electron density. Next, we study the interface formed between the Cl-doped supercell and metals and observe a reduction in the Schottky barrier height (SBH) in comparison to the pure supercell. This reduction found is higher for Pd in comparison to Au, which is further validated by examining the charge transfer occurring at the interface. Our study confirms that Cl doping is an efficient mechanism to reduce the n-SBH for both Au and Pd, which form different types of contact with WS2. (C) 2016 AIP Publishing LLC.
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页数:5
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