Interfacial Reactions Between Cu-Ag Alloy Substrates and Sn

被引：1

作者：

Yang, Teng-Kai ^{[1
]}

Lin, Chih-Fan ^{[1
]}

Chen, Chih-Ming ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Chem Engn, Taichung 402, Taiwan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 01期

关键词：

Intermetallic compounds; Cu; Ag; interphase interface; LEAD-FREE SOLDERS; PB-FREE SOLDERS; JOINTS; GROWTH; ZN; MICROSTRUCTURE; KINETICS; COUPLES; FINISH; PHASE;

D O I：

10.1007/s11664-014-3448-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interfacial reactions between Sn and Cu-xAg alloys (x = 0 at.%, 11.1 at.%, 33.3 at.%, and 50 at.%) were investigated. The as-prepared Cu-Ag alloys displayed a microstructure composed of a proeutectic (Cu) phase and a eutectic (Cu) + (Ag) structure, where the fraction of the eutectic structure increased with increasing Ag content. At 200 degrees C and 250 degrees C, reactions to form Cu6Sn5 and Cu3Sn phase occurred at the Sn/Cu-Ag interface, and also inside the Cu-Ag substrate along the (Ag)/(Cu) interphase interface. The penetrated growth behavior by way of the (Ag)/(Cu) interphase interface accelerated the growth rate of the intermetallic compounds and the consumption of the Cu-Ag substrates. A comparison between conventional Sn/Cu and Sn/Cu-Ag systems indicated that addition of Ag to Cu had a significant accelerating effect on the Sn/Cu-xAg interfacial reaction to form Cu6Sn5.

引用

页码：511 / 517

页数：7

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