Novel Red Emission from MoO3/MoS2-MoO2-MoO3 Core-Shell Belt Surface

被引:16
作者
Wang, Lei [1 ]
Ji, Xiaohong [1 ]
Wang, Ting [1 ,2 ,3 ]
Zhang, Qinyuan [1 ,2 ,3 ]
机构
[1] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Guangdong, Peoples R China
[2] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
[3] South China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2; MoS2-MoO2-MoO3; hybrids; electroluminescent emission; metal-semiconductor-metal structured device; space charge limited conduction; FEW-LAYER MOS2; NANOSHEETS; MONOLAYER; HETEROSTRUCTURES; REDUCTION; MOO2;
D O I
10.1021/acsami.8b13784
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrically driven red emission from MoS2-MoO2-MoO3 (MS-MO) hybrid-based metal-semiconductor-metal (MSM) devices is reported for the first time. MoO3 belts with high crystal quality and sufficient size are synthesized by thermal deposition. A layer of MS-MO hybrid is then produced on the belt surface to form MoO3/MS-MO core-shell by sulfurization. The devices exhibit unique electrical properties, a nonlinear I-V curve, and electric hysteresis characteristics at high applied biases (>2.4 V), where MS-MO hybrids act as electron transport channels. The electroluminescent current of the device increases to a set current limit over time when a constant bias is applied. The novel characteristics of the device are attributed to the space charge limited conduction (SCLC) mechanism occurring in MS-MO hybrids. The strong light emission is from recombination of excitons within the MoS2 phase. This work develops a simple and effective method to drive MoS2 to emit light on a large scale without using monolayer MoS2 and vertical p-n junctions, indicating great potential for future 2D optoelectronics and photonics applications.
引用
收藏
页码:36297 / 36303
页数:7
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