Thermal oxidation of lattice matched InAlN/GaN heterostructures

被引：14

作者：

Alomari, M. ^{[1
]}

Chuvilin, A. ^{[2
]}

Toth, L. ^{[3
]}

Pecz, B. ^{[2
,3
]}

Carlin, J. -F. ^{[4
]}

Grandjean, N. ^{[4
]}

Gaquiere, C. ^{[5
]}

di Forte-Poisson, M. -A. ^{[6
]}

Delage, S. ^{[6
]}

Kohn, E. ^{[1
]}

机构：

[1] Univ Ulm, Inst Elect Devices & Circuits, Albert Einstein Allee 45, D-89081 Ulm, Germany

[2] Univ Ulm, CFEM, EMGMS, D-89081 Ulm, Germany

[3] Res Inst Tech Phys & Mat Sci, Budapest 15256, Hungary

[4] Ecole Polytech Fed Lausanne, Lab Adv Semicond Photon, Lausanne, Switzerland

[5] Univ Lille, IEMN, F-60069 Lille, France

[6] Alcatel Thales 3 5 Lab, F-91460 Marcoussis, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1 | 2010年 / 7卷 / 01期

关键词：

SILICON;

D O I：

10.1002/pssc.200982623

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we have investigated the thermal oxidation of thin InAlN/GaN heterostructures in their lattice matched configuration (83% Al) in oxygen atmosphere at 800 degrees C. TEM cross sections revealed a partially crystalline oxide with an initial oxidation rate of 0.37 nm/minute. MOS diodes fabricated using the thermal oxide as a gate dielectric showed an exponential drop in the gate leakage which scales with the square root of oxidation time indicating diffusion limited oxidation through the InAlN barrier. The effect of oxidation on the interfacial InAlN/GaN sheet charge density (NS) is correlated with a reduction of thickness for short oxidation times (up to 4 min) and an abrupt change in the surface potential for longer oxidation times. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：13 / 16

页数：4

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