Cleaved-edge overgrowth of aligned quantum dots on strained layers of InGaAs

被引：7

作者：

Wasserman, D ^{[1
]}

Lyon, SA ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1827351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain aligned InAs quantum dots were grown on the cleaved edges of first growth samples containing strained InxGa(1-x)As layers of varying thickness and indium fraction. The formation of the cleaved-edge quantum dots was observed by means of atomic force microscopy. 100% linear alignment of InAs quantum dots over the InGaAs strain layers of the first growth sample is demonstrated. Linear density of the aligned dots was found to depend on the properties of the underlying InGaAs strain layers. Vertical alignment of an additional InAs quantum dot layer over the buried, linearly aligned, initial dot layer was observed for thin GaAs spacer layers. (C) 2004 American Institute of Physics.

引用

页码：5352 / 5354

页数：3

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