Segregation Behavior of Metal Impurities During Al-Si Melt Directional Solidification with an Open Ended Crucible

被引：5
作者：
Bai, Xiaolong [1 ,2 ]
Ban, Boyuan [1 ]
Li, Jingwei [1 ]
Fu, Zhiqiang [2 ]
Peng, Zhijian [2 ]
Wang, Chengbiao [2 ]
Chen, Jian [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Photovolat & Energy Conservat Mat, Inst Appl Technol, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China
[2] China Univ Geosci, Sch Engn & Technol, Beijing 100083, Peoples R China
来源：
SILICON | 2018年 / 10卷 / 04期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
Segregation; Al-Si alloy; Directional solidification; Apparent segregation coefficient; METALLURGICAL SILICON; B REMOVAL; P SYSTEM; PURIFICATION; MECHANISM; PLASMA; ALLOY; IRON; TI;
D O I：
10.1007/s12633-017-9602-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The distribution characteristic and segregation behavior of metal impurities during directional solidification of Al-20Si, Al-30Si and Al-40Si alloys have been investigated. The morphologies of the alloys and impurity phases were observed by optical microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The concentration profiles of representative metal impurities Al, Fe and Ti were measured by inductively coupled plasma optical emission spectrometry. The results indicate that the metal impurities segregate into the eutectic Al-Si melt during the growth of primary Si flakes and gradually segregate towards the top of each ingot during directional solidification. A concept of apparent segregation coefficient is proposed to characterize the segregation behavior of impurity elements. The apparent segregation coefficients of metal impurities decrease with increase in solidification temperature of the Al-Si alloys.
引用
收藏
页码：1283 / 1290
页数：8
相关论文
共 26 条
[1]   Mechanism of B removal by solvent refining of silicon in Al-Si melt with Ti addition [J].
Ban, Boyuan ;
Li, Jingwei ;
Bai, Xiaolong ;
He, Qiuxiang ;
Chen, Jian ;
Dai, Songyuan .
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 672 :489-496
[2]   The Mechanism of P Removal by Solvent Refining in Al-Si-P System [J].
Ban, Boyuan ;
Bai, Xiaolong ;
Li, Jingwei ;
Li, Yanlei ;
Chen, Jian ;
Dai, Songyuan .
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 2015, 46 (06) :2430-2437
[3]   Refining of metallurgical grade Si by solidification of Al-Si melt under electromagnetic stirring [J].
Ban, Boyuan ;
Li, Yanlei ;
Zuo, Qiuxia ;
Zhang, Taotao ;
Chen, Jian ;
Dai, Songyuan .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2015, 222 :142-147
[4]   Purification of Metallurgical Silicon using Iron as an Impurity Getter Part I: Growth and Separation of Si [J].
Esfahani, Shaghayegh ;
Barati, Mansoor .
METALS AND MATERIALS INTERNATIONAL, 2011, 17 (05) :823-829
[5]   Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications [J].
Johnston, M. D. ;
Barati, M. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2010, 94 (12) :2085-2090
[6]   Thermodynamics of boron distribution in solvent refining of silicon using ferrosilicon alloys [J].
Khajavi, Leili Tafaghodi ;
Morita, Kazuki ;
Yoshikawa, Takeshi ;
Barati, Mansoor .
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 619 :634-638
[7]   Refining of MG-Si by hybrid melting using steam plasma and EMC [J].
Lee, B. P. ;
Lee, H. M. ;
Park, D. H. ;
Shin, J. S. ;
Yu, T. U. ;
Moon, B. M. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (01) :56-58
[8]   Enhancing B removal from Si with small amounts of Ti in electromagnetic solidification refining with Al-Si alloy [J].
Lei, Yun ;
Sun, Luen ;
Ma, Wenhui ;
Wei, Kuixian ;
Morita, Kazuki .
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 666 :406-411
[9]   Thermodynamic evaluation of segregation behaviors of metallic impurities in metallurgical grade silicon during Al-Si solvent refining process [J].
Li, Jingwei ;
Guo, Zhancheng .
JOURNAL OF CRYSTAL GROWTH, 2014, 394 :18-23
[10]  
Li Y., 2014, HIGH TEMP MAT PROCES, V34, P43
123