Controlled Growth of Semiconducting and Metallic Single-Wall Carbon Nanotubes

被引:78
作者
Liu, Chang [1 ]
Cheng, Hui-Ming [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
基金
中国国家自然科学基金;
关键词
SELECTIVE GROWTH; ELECTRONIC-STRUCTURE; HIGH-QUALITY; LARGE-SCALE; LOW-COST; CHIRALITY; CATALYST; NUCLEATION; ARRAYS; VAPOR;
D O I
10.1021/jacs.6b00838
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-wall carbon nanotubes (SWCNTs) can be either semiconducting or metallic depending on their chiral angles and diameters. The use of SWCNTs in electronics has long been hindered by the fact that the as-prepared SWCNTs are usually a mixture of semiconducting and metallic ones. Therefore, controlled synthesis of SWCNTs with a uniform electrical type or even predefined chirality has been a focus of carbon nanotube research in recent years. In this Perspective, we summarize recent progress on the controlled growth of semiconducting and metallic SWCNTs by in situ selective etching and by novel catalyst design. The advantages and mechanisms of these approaches are analyzed, and the challenges are discussed. Finally, we predict possible breakthroughs and future trends in the controlled synthesis and applications of SWCNTs. © 2016 American Chemical Society.
引用
收藏
页码:6690 / 6698
页数:9
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