Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes

被引：93
作者：
Lin, Gong-Ru [1 ]
Pai, Yi-Hao [1 ]
Lin, Cheng-Tao [1 ]
Chen, Chun-Chieh [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期
关键词：
electroluminescence; light emitting diodes; MIS devices; silicon compounds; SILICON; DOTS;
D O I：
10.1063/1.3459144
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electroluminescence (EL) of the metal-insulator-semiconductor light-emitting diodes (MISLEDs) made by Si-rich SiNx and SiOx films with buried Si nanocrystals are compared. The SiNx facilitates carrier transport and EL from MISLED with turn-on current and voltage of 4 mu A and 12 V by reducing barrier heights at indium tin oxide /SiNx and SiNx/Si-nc interfaces. The SiNx MISLED exhibits larger charge loss rate of 12% within 200 s and shorter delay time of 3.86x10(-4) sec than SiOx one, which limit its external EL quantum efficiency by strong carrier escaping effect due to the insufficient carrier confinement in Si nanocrystals with low interfacial barriers. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3459144]
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes
    Mondragon, Margarita
    Moggio, Ivana
    de-Leon, Arxel
    Arias, Eduardo
    JOURNAL OF LUMINESCENCE, 2013, 144 : 176 - 179
  • [32] Transient electroluminescence in multilayer organic light-emitting diodes:: experiment and theory
    Book, K
    Nikitenko, VR
    Bässler, H
    Elschner, A
    SYNTHETIC METALS, 2001, 122 (01) : 135 - 139
  • [33] Carrier Injection Tailoring and Electroluminescence Properties of Carbon Dots in Electroluminescent Light-Emitting Diodes
    Qu, Jincheng
    Yao, Dengli
    Yi, Zichuan
    Chi, Feng
    Liu, Liming
    Zhang, Xiaowen
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (02):
  • [34] Design and characterization of high performance electroluminescence materials for light-emitting diodes
    Zhu, DB
    Liu, YQ
    Bai, FL
    THIN SOLID FILMS, 2000, 363 (1-2) : 51 - 54
  • [35] Transient electroluminescence from rubrene light-emitting diodes using double voltage pulse
    Chowdhury, A
    Pal, AJ
    SYNTHETIC METALS, 1999, 106 (02) : 85 - 88
  • [36] Influence of extended structural defects on the characteristics of electroluminescence in efficient silicon light-emitting diodes
    Sobolev, NA
    Emel'yanov, AM
    Shek, EI
    Vdovin, VI
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 283 - 288
  • [37] Local electroluminescence and time-resolved photoluminescence study of InGaN light-emitting diodes
    Onushkin, Grigory A.
    Hong, Sang-Su
    Lee, Jin-Hyun
    Park, June-Sik
    Son, Joong-Kon
    Kim, Min-Ho
    Park, YongJo
    APPLIED PHYSICS LETTERS, 2009, 95 (10)
  • [38] Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes
    Shim, Jong-In
    Han, Dong-Pyo
    Shin, Dong-Soo
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2016, 52 (11)
  • [39] Correlation between electroluminescence and charge trapping in multi-color Eu implanted Si-based light-emitting diodes
    Nazarov, A. N.
    Tyagulskyy, I. P.
    Tyagulskiy, S. I.
    Rebohle, L.
    Skorupa, W.
    Biskupek, J.
    Kaiser, U.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06) : 902 - 906
  • [40] Optimization of the electroluminescence from SiNx-based light-emitting devices by modulating the size and morphology of silver nanostructures
    Wang, Feng
    Li, Dongsheng
    Jin, Lu
    Ren, Changrui
    Yang, Deren
    Que, Duanlin
    OPTICS EXPRESS, 2013, 21 (02): : 1675 - 1686
12345