Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon (111) substrate

被引：5
作者：
Vellas, N [1 ]
Gaquière, C
Minko, A
Hoël, V
De Jaeger, JC
Cordier, Y
Semond, F
机构：
[1] CNRS, Inst Electron & Microelect Nord, Dept Hyperfrequences & Semicond, Tiger Common Lab, Villeneuve Dascq, France
[2] CNRS, CRHEA, Valbonne, France
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 03期
关键词：
AlGaN/GaN; high resistive silicon (111) substrate; load impedance; microwave power; pulsed measurement; traps effects;
D O I：
10.1109/LMWC.2003.810117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. These results constitute the state of the art.
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收藏
页码：99 / 101
页数：3
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