Photoelectric properties of GaAs p-n-junction under illumination of intense laser radiation

被引：0

作者：

Asmontas, S. ^{[1
]}

Gradauskas, J. ^{[1
]}

Suziedelis, A. ^{[1
]}

Silenas, A. ^{[1
]}

Vaicikauskas, V. ^{[1
]}

Zalys, O. ^{[1
]}

Steikunas, G. ^{[1
]}

Steikuniene, A. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, LT-01108 Vilnius, Lithuania

来源：

EIGHTH INTERNATIONAL CONFERENCE ON ADVANCED OPTICAL MATERIALS AND DEVICES (AOMD-8) | 2014年 / 9421卷

关键词：

laser radiation; GaAs; p-n junction; photoresponse; electromotive force; solar cell; SEMICONDUCTOR;

D O I：

10.1117/12.2077437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of experimental investigation of photoelectric properties of GaAs p-n-junction illuminated by short laser pulses of 1.06 mu m wavelength are presented. The influence of laser radiation intensity and external bias voltage on the formation of photoresponse voltage has been studied. Free carrier heating was recognized to influence significantly the magnitude of the measured photovoltage. Possibility to improve the conversion efficiency of solar cells is discussed.

引用

页数：5

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