Study of intrinsic defect states of FeSe with scanning tunneling microscopy

被引：10

作者：

Bu, Kunliang ^{[1
]}

Wang, Bo ^{[2
]}

Zhang, Wenhao ^{[1
]}

Fei, Ying ^{[1
]}

Zheng, Yuan ^{[1
]}

Ai, Fangzhou ^{[1
]}

Wu, Zongxiu ^{[1
]}

Wang, Qisi ^{[3
,4
]}

Wo, Hongliang ^{[3
,4
]}

Zhao, Jun ^{[3
,4
,5
]}

Jin, Chuanhong ^{[2
]}

Yin, Yi ^{[1
,5
]}

机构：

[1] Zhejiang Univ, Zhejiang Prov Key Lab Quantum Technol & Device, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[3] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[5] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

PHYSICAL REVIEW B | 2019年 / 100卷 / 15期

基金：

中国国家自然科学基金;

关键词：

HIGH-TEMPERATURE SUPERCONDUCTIVITY; PHASE;

D O I：

10.1103/PhysRevB.100.155127

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We apply high-resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects, including the type-I dumbbell, type-II dumbbell, top-layer Se vacancy, and inner-layer Se-site defect, are extensively analyzed by scanning tunneling spectroscopy. Through characterized depression and enhancement of density of states measured in a large energy range, the type-I dumbbell and type-II dumbbell are determined to be the Fe vacancy and Se-Fe defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects is compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of the defect states in our experiment lays a foundation for its comparison with the result of complex theoretical calculations in the future.

引用

页数：8

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