Coupling of quantum states in InAs/GaAs quantum dot molecule

被引：0

作者：

Sobolev, M. M. ^{[1
]}

Zhukov, A. E. ^{[1
]}

Vasilev, A. P. ^{[1
]}

Semenova, E. S. ^{[1
]}

Mikhrin, V. S. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

基金：

俄罗斯基础研究基金会;

关键词：

quantum dot molecule; coupling of electron states; localization of holes;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep level transient spectroscopy (DLTS) is used to study electron and hole emission from the states in the system of vertically correlated InAs quantum dots in the p-n InAs/GaAs heterostructures, in relation to the thickness of the GaAs spacer between two layers of InAs quantum dots and to the reverse bias voltage.

引用

页码：787 / +

页数：2

共 4 条

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