Optical and surface properties of 3C-SiC thin epitaxial films grown at different temperatures on 4H-SiC substrates

被引：15

作者：

Wang, Bingjun ^{[1
,2
]}

Yin, Junhua ^{[1
]}

Chen, Daihua ^{[1
]}

Long, Xianjian ^{[1
]}

Li, Lei ^{[3
]}

Lin, Hao-Hsiung ^{[4
]}

Hu, Weiguo ^{[2
]}

Talwar, Devki N. ^{[5
]}

Jia, Ren-Xu ^{[6
]}

Zhang, Yu-Ming ^{[6
]}

Ferguson, Ian T. ^{[7
]}

Sun, Wenhong ^{[3
]}

Feng, Zhe Chuan ^{[1
,8
]}

Wan, Lingyu ^{[1
]}

机构：

[1] Guangxi Univ, Ctr Nanoenergy Res, Sch Phys Sci & Technol, Lab Optoelect Mat & Detect Technol,Guangxi Key La, Nanning 530004, Peoples R China

[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China

[3] Guangxi Univ, Res Ctr Optoelect Mat & Devices, Sch Phys Sci & Technol, Nanning 530004, Peoples R China

[4] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[5] Univ North Florida, Dept Phys, 1 UNF Dr, Jacksonville, FL 32224 USA

[6] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

[7] Kennesaw State Univ, Southern Polytech Coll Engn & Engn Technol, Marietta, GA 30060 USA

[8] Sci Exploring Lab, Arbour Glenn Dr, Lawrenceville, GA 30043 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2021年 / 156卷

基金：

中国国家自然科学基金;

关键词：

3C; 4H-SiC; Epitaxial growth temperature; X-ray diffraction; X-ray photoelectron spectroscopy; High temperature Raman; RAMAN-SCATTERING; SPECTROSCOPIC PHONON; CVD; PHOTOLUMINESCENCE; SI(100); OXYGEN; STATES; XPS;

D O I：

10.1016/j.spmi.2021.106960

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A series of 3C-SiC films were grown on 4H-SiC substrates with different growth conditions using high-temperature chemical vapor deposition (HT-CVD). The influences of growth temperature (Tg) on the morphology, optical and material properties of films were assessed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy (RSS). Significant effects of Tg on the film crystalline quality were observed from analyzing XRD and RSS results. XPS characterized the surface states of Si, C, O elements, and variations with Tg. The 3C-SiC Raman TO mode was found to shift to lower frequency with the increase of Tg in 1530-1580 degrees C. Temperature dependent Raman studies indicated the anharmonic coupling and variation of phonon lifetimes. The optimized Tg is obtained.

引用

页数：11

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