Magnetotransport probing of the quality of the heterointerfaces and degree of symmetry of the potential profile of quantum wells in the valence band of the Ge1-xSix/Ge/Ge1-xSix heterosystem

被引:9
作者
Yakunin, MV
Alshanskii, GA
Arapov, YG
Neverov, VN
Harus, GI
Shelushinina, NG
Kuznetsov, OA
de Visser, A
Ponomarenko, L
机构
[1] Russian Acad Sci, Inst Met Phys, Urals Div, Ekaterinburg 620219, Russia
[2] Nizny Novgorod State Univ, Inst Physicotech, Nizhnii Novgorod 603600, Russia
[3] Univ Amsterdam, Van der Waals Zeeman Inst, Amsterdam, Netherlands
关键词
D O I
10.1063/1.1819860
中图分类号
O59 [应用物理学];
学科分类号
摘要
It is shown that in a periodic system of p-type Ge1-xSix/Ge/Ge1-xSix quantum wells having a Ge layer more than similar to30 nm wide, the hole gas in each Ge layer is separated into two two-dimensional sublayers concentrated near opposite boundaries of the layer. This follows from the vanishing of the quantum Hall effect plateau and of the corresponding minimum of the longitudinal magnetoresistance for a filling factor nu=1. Here positive magnetoresistance is observed, which is attributed to the presence of two types of holes with different mobilities. A quantitative analysis shows that these are mainly heavy holes having different mobilities in the sublayers that form. The difference of the mobilities indicates that the opposite heterointerfaces of the Ge layers are of different quality. It follows from an analysis of the shape of the quantum Hall effect plateau for nu=2 that the densities of holes in the sublayers formed are close and, consequently, that the profile of the potential wells is close to symmetric. (C) 2004 American Institute of Physics.
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页码:853 / 857
页数:5
相关论文
共 13 条
[1]   Probing the p-Ge1-xSix/Ge/p-Ge1-xSix quantum well by means of the quantum Hall effect [J].
Arapov, YG ;
Harus, GI ;
Neverov, VN ;
Shelushinina, NG ;
Yakunin, MV ;
Alshanskii, GA ;
Kuznetsov, OA .
NANOTECHNOLOGY, 2000, 11 (04) :351-358
[2]   MAGNETIC-FIELD-DRIVEN DESTRUCTION OF QUANTUM HALL STATES IN A DOUBLE QUANTUM-WELL [J].
BOEBINGER, GS ;
JIANG, HW ;
PFEIFFER, LN ;
WEST, KW .
PHYSICAL REVIEW LETTERS, 1990, 64 (15) :1793-1796
[3]   ABSENCE OF BACKSCATTERING IN THE QUANTUM HALL-EFFECT IN MULTIPROBE CONDUCTORS [J].
BUTTIKER, M .
PHYSICAL REVIEW B, 1988, 38 (14) :9375-9389
[4]   Silicon-germanium - a promise into the future? [J].
Grimmeiss, HG .
SEMICONDUCTORS, 1999, 33 (09) :939-941
[5]   SUB-BAND POPULATIONS AND THE SPATIAL-DISTRIBUTION OF ELECTRONS IN GAAS/(AL,GA)AS MODULATION-DOPED QUANTUM WELLS [J].
HARRIS, JJ ;
LAGEMAAT, JM ;
BATTERSBY, SJ ;
HELLON, CM ;
FOXON, CT ;
LACKLISON, DE .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (08) :773-780
[6]   PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION DOPED HETEROJUNCTIONS [J].
KANE, MJ ;
APSLEY, N ;
ANDERSON, DA ;
TAYLOR, LL ;
KERR, T .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (29) :5629-5636
[7]   COUPLING OF ELECTRON GASES IN WIDE QUANTUM WELLS [J].
LAGEMAAT, JM ;
BAUER, GEW ;
HARRIS, JJ ;
FOXON, CT .
PHYSICAL REVIEW B, 1988, 38 (18) :13439-13442
[8]  
RASHBA EI, 1986, FIZ TEKH POLUPROV, V20, P977
[9]   IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].
SASA, S ;
SAITO, J ;
NANBU, K ;
ISHIKAWA, T ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L573-L575
[10]  
SASA S, 1985, JPN J APPL PHYS, V24, P281