Germanium for silicon photonics

被引：54

作者：

Ishikawa, Yasuhiko ^{[1
]}

Wada, Kazumi ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

Silicon photonics; Ge; UHV-CVD; Active photonic devices; BAND-GAP SHRINKAGE; GE; SI; PHOTODETECTORS; FILMS; GAIN;

D O I：

10.1016/j.tsf.2009.10.062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper describes that Ge plays an enabler to integrate active photonic devices on a Si platform. In spite of the large lattice mismatch of similar to 4% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared active photonic devices, i.e., photodiodes, optical modulators and light emitters, are described. Several issues on the device physics as well as the integration with Si electronics are discussed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S83 / S87

页数：5

共 34 条

[1] Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications [J].

Cannon, DD ;

Liu, JF ;

Ishikawa, Y ;

Wada, K ;

Danielson, DT ;

Jongthammanurak, S ;

Michel, J ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :906-908

[2]

Cheng Szu-Lin, 2009, Opt Express, V17, P10019

[3] Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates [J].

Colace, L ;

Masini, G ;

Assanto, G ;

Luan, HC ;

Wada, K ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1231-1233

[4] Low dark-current germanium-on-silicon near-infrared detectors [J].

Colace, Lorenzo ;

Ferrara, Pasquale ;

Assanto, Gaetano ;

Fulgoni, Dom ;

Nash, Lee .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (21-24) :1813-1815

[5] Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100) [J].

Fang, Y. -Y. ;

Tolle, J. ;

Roucka, R. ;

Chizmeshya, A. V. G. ;

Kouvetakis, John ;

D'Costa, V. R. ;

Menendez, Jose .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[6] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[7] Ultra-compact, low RF power, 10 gb/s silicon Mach-Zehnder modulator [J].

Green, William M. J. ;

Rooks, Michael J. ;

Sekaric, Lidija ;

Vlasov, Yurii A. .

OPTICS EXPRESS, 2007, 15 (25) :17106-17113

[8] First-Principles Analysis of Indirect-to-Direct Band Gap Transition of Ge under Tensile Strain [J].

Hoshina, Yutaka ;

Iwasaki, Kojiro ;

Yamada, Akira ;

Konagai, Makoto .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)

[9] Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate [J].

Ishikawa, Y ;

Wada, K ;

Liu, JF ;

Cannon, DD ;

Luan, HC ;

Michel, J ;

Kimerling, LC .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (01)

[10] Strain-induced band gap shrinkage in Ge grown on Si substrate [J].

Ishikawa, Y ;

Wada, K ;

Cannon, DD ;

Liu, JF ;

Luan, HC ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2044-2046

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