1/f noise characterization in CMOS transistors in 0.13μm technology

被引：1
作者：
Citakovic, Jelena [1 ]
Stenberg, Lars J. [1 ]
Andreani, Pietro [1 ]
机构：
[1] Tech Univ Denmark, Orsted DTU, DK-2800 Lyngby, Denmark
来源：
24TH NORCHIP CONFERENCE, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/NORCHP.2006.329249
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13 mu m technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density N-t, the Hooge parameter alpha(H) and the Coulomb scattering parameter a, have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.
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页码：81 / +
页数：2
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