Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN (vol 4, pg 4719, 2022)

被引:0
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作者
Tang, Jingmin [1 ,2 ]
Takeuchi, Soichiro [3 ]
Tanaka, Masaki [3 ]
Tomita, Hiroto [3 ]
Hashimoto, Yusuke [3 ]
Nagata, Takahiro [1 ]
Chen, Jun [1 ]
Ohkochi, Takuo [4 ]
Kotani, Yoshinori
Matsushita, Tomohiro
Yamashita, Yoshiyuki [1 ,2 ]
机构
[1] Natl Inst Mat Sci NIMS, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Kyushu Univ, Fac Engn, Dept Mat Phys & Chem, Motooka 744, Fukuoka 8190395, Japan
[3] Nara Inst Sci & Technol NAIST, Ikoma, Nara 6300192, Japan
[4] Japan Synchrotron Radiat Res Inst JASRI, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan
关键词
D O I
10.1021/acsaelm.2c01304
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页数:1
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    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (10) : 5087 - 5087
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    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (10) : 4618 - 4622