Silicon Quantum Dots: Chemical, Physical Synthesis, and Applications in Fluorescence Detection, Solar Cell, Photocatalyst, and Composite

被引:1
作者
Tong, Wanzhe [1 ]
Yin, Qinhong [2 ]
Fang, Dong [1 ]
Zeng, Taofang [3 ,4 ]
Yi, Jianhong [1 ]
机构
[1] Kunming Univ Sci & Technol, Fac Mat Sci & Engn, Kunming 650093, Yunnan, Peoples R China
[2] Yunnan Police Officer Acad, Key Lab Drug Anal & Control Technol, Minist Publ Secur, Kunming 650223, Yunnan, Peoples R China
[3] Kunming SinoPlatinum Met Catalyst Co Ltd, Kunming, Yunnan, Peoples R China
[4] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
关键词
Silicon; quantum dot; synthesis; battery; fluorescence detection; photocatalyst; composite; preparation methods; parameters; PULSED-LASER ABLATION; LARGE-SCALE SYNTHESIS; SENSITIVE DETECTION; SI NANOPARTICLES; LIGHT-EMISSION; LABEL-FREE; MICROEMULSION SYNTHESIS; DIRECT BANDGAP; NANOCRYSTALS; OXIDATION;
D O I
10.2174/1573413717666210412152255
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
Silicon quantum dots (Si QDs) with unique properties of light, electricity, magnetism, and heat possess the advantages of non-toxicity, environmental protection, and serving as abundant reserves. They are widely used in various fields and have great potential for development. Till now, numerous researchers have reported the research progress of Si QDs or elaborated the behavior mechanism. However, a few comparisons are made on the properties of a quantum dot in different fields and different preparation methods. Besides, the parameters of Si QDs vary greatly in different application fields, which are worthy of comparison. During the current work, we review the research progress and synthesis methods in recent years. The main influencing factors of Si QDs in different preparation methods (physical and chemical) and different application properties (fluorescence detection, solar cell, photocatalyst, and composite) are compared and discussed in detail. Therefore, this paper aims to find promising preparation methods for different application fields and provide a clear direction for researchers to study Si QDs in different directions.
引用
收藏
页码:182 / 202
页数:21
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