Controlled growth of aluminum nitride nanostructures: Aligned tips, brushes, and complex structures

被引：34

作者：

Chen, Zhuo ^{[1
]}

Cao, Chuanbao ^{[1
]}

Zhu, Hesun ^{[1
]}

机构：

[1] Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 05期

关键词：

D O I：

10.1021/jp065908b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The aluminum nitride (AlN) nanostructures, including aligned tips, brushes, and complex structures, have been synthesized by a chemical vapor deposition procedure without any catalyst. Both the aspect ratio of the AIN nanotips and the morphologies of the products can be controlled by adjusting the growth temperature, time, and orientation of the substrate. The structure and morphology of the as-synthesized AIN nanostructures are characterized by X-ray diffraction and scanning and transmission electron microscopies. Field emission characterization shows that the turn-on fields for the aligned AIN nanotips grown at 700 and 800 degrees C are 10.8 and 12.2 V mu m(-1), respectively.

引用

页码：1895 / 1899

页数：5

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