Passivation effects of aluminum on polycrystalline silicon thin-film transistor with metal-replaced junctions

被引：2

作者：

Zhang, Dongli ^{[1
]}

Wong, Man ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 02期

关键词：

aluminum; passivation; polycrystalline silicon; thin-film transistor (TFT);

D O I：

10.1109/LED.2006.889506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher ON-state current, and improved immunity against short-channel effects. These improvements are consistent with a. measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel.

引用

页码：126 / 128

页数：3

共 11 条

[1] Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's [J].

Jacunski, MD ;

Shur, MS ;

Hack, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1433-1440

[2]

Lewis A. G., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P349, DOI 10.1109/IEDM.1989.74295

[3] ON THE PSEUDO-SUBTHRESHOLD CHARACTERISTICS OF POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS WITH LARGE GRAIN-SIZE [J].

LI, TS ;

LIN, PS .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) :240-242

[4] Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal-Induced Crystallization [J].

Meng, Zhiguo ;

Zhao, Shuyun ;

Wu, Chunya ;

Zhang, Bo ;

Wong, Man ;

Kwok, Hoi-Sing .

JOURNAL OF DISPLAY TECHNOLOGY, 2006, 2 (03) :265-273

[5]

OKUMURA F, 2005, P IDMC 2005, P311

[6] DEVELOPMENT AND ELECTRICAL-PROPERTIES OF UNDOPED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

PROANO, RE ;

MISAGE, RS ;

AST, DG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1915-1922

[7] EFFICIENT SI SOLAR-CELLS BY LOW-TEMPERATURE SOLID-PHASE EPITAXY [J].

TSAUR, BY ;

TURNER, GW ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :749-751

[8] Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass display [J].

Wu, Chunya ;

Meng, Zhiguo ;

Xiong, Shaozhen ;

Wong, Man ;

Kwok, Hoi Sing .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1741-1744

[9] Effects of trace nickel on the growth kinetics and the electrical characteristics of metal-induced laterally crystallized polycrystalline silicon and devices [J].

Zhang, DL ;

Wong, M .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2005, 13 (10) :815-822

[10] Metal-replaced junction for reducing the junction parasitic resistance of a TFT [J].

Zhang, DL ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (04) :269-271

← 1 2 →