Variable-Switching-Frequency Single-Stage Bidirectional GaN AC-DC Converter for the Grid-Tied Battery Energy Storage System

被引：39

作者：

Chen, Tianxiang ^{[1
]}

Yu, Ruiyang ^{[1
]}

Huang, Alex Q. ^{[1
]}

机构：

[1] Univ Texas Austin, Semicond Power Elect Ctr SPEC, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2022年 / 69卷 / 11期

基金：

美国能源部;

关键词：

Batteries; Zero voltage switching; Transistors; Inductors; Bridge circuits; Switching frequency; Silicon; AC-DC converter; battery energy storage system (BESS); dual phase shift (DPS); dual-active-bridge (DAB); gallium-nitride (GaN); online calculation; optimal control; power-factor-correction (PFC); variable frequency (VF); zero-voltage-switching (ZVS); POWER-FACTOR CORRECTION; BESS;

D O I：

10.1109/TIE.2021.3120483

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This article presents a 10-kW novel gallium-nitride (GaN)-based three-phase grid to 48-V battery energy storage system (BESS). The BESS utilizes a single-stage ac-dc dual-active-bridge (DAB) converter with dual-phase-shift (DPS) and variable-frequency (VF) control. 600- and 80-V GaN power transistors, as well as planar magnetics, are used to achieve 96.6% efficiency and 50-W/in(3) power density. The operation principle and power transfer characteristics are derived based on time-domain analysis of the DAB inductor current. VF and DPS are utilized to achieve power factor correction and zero-voltage switching simultaneously while minimizing the DAB rms current. An online calculation algorithm is presented with short execution time, which enables the closed-loop control of the BESS. Experimental results are presented to validate the novel control.

引用

页码：10776 / 10786

页数：11

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