TOWARD ULTIMATE PERFORMANCE IN GHZ MEMS RESONATORS: LOW IMPEDANCE AND HIGH Q

被引：31

作者：

Harrington, B. P. ^{[1
]}

Shahmohammadi, M. ^{[1
]}

Abdolvand, R. ^{[1
]}

机构：

[1] Oklahoma State Univ, Tulsa, OK USA

来源：

MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2010年

关键词：

D O I：

10.1109/MEMSYS.2010.5442310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report a similar to 1GHz lateral extensional thin-film piezoelectric-on-substrate (TPoS) resonator with an unloaded quality factor (Q) of 6700 in air (frequency-quality factor product of 6.6x10(12)), a motional impedance of similar to 160 Omega, and a linear thermal coefficient of frequency of -29ppm. To achieve such low impedance the 21(st) harmonic resonance mode of a single crystalline silicon block is excited while the near-resonance spurs are suppressed by rigidly supporting the resonator with multiple anchors. Results measured from identical devices each supported with various anchor designs are compared and the effectiveness of increasing rigidity to remove the near-resonance distortions is confirmed. With the reported performance in this work, the fabricated similar to 1 GHz resonator is suitable for very low-power and low-noise high-frequency oscillator applications.

引用

页码：707 / 710

页数：4

共 6 条

[1]

Abdolvand R., 2007, SOL STAT SENS ACT MI, P53

[2]

Harrington B. P., 2009, 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009, P700, DOI 10.1109/SENSOR.2009.5285420

[3]

HO GK, 2007, MEMS 07 21 25 JAN, P791

[4] Nonlinear mechanical effects in silicon longitudinal mode beam resonators [J].