Guiding Principles toward Future Gate Stacks Given by the Construction of New Physical Concepts

被引：0

作者：

Shiraishi, Kenji ^{[1
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

来源：

2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2009年

关键词：

OXIDATION; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：196 / 197

页数：2

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