Excess avalanche noise in In0.52Al0.48As

被引：81

作者：

Goh, Y. L. ^{[1
]}

Marshall, A. R. J.

Massey, D. J.

Ng, J. S.

Tan, C. H.

Hopkinson, M.

David, J. P. R.

Jones, S. K.

Button, C. C.

Pinches, S. M.

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Bookham Technol PLC, Caswell Towcester NN12 8EQ, Northants, England

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2007年 / 43卷 / 5-6期

基金：

英国工程与自然科学研究理事会;

关键词：

avalanche photodetectors; excess noise; impact ionization; InAlAs;

D O I：

10.1109/JQE.2007.897900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.

引用

页码：503 / 507

页数：5

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